SKU:34787882255
Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 17 - Jul 22
Description
Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cmThermal oxide Layer Research Grade, about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 30 nm ( 300A) + 10% Refractive index: 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: <0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 50 + 0. 025 mm Orientation: (100) + 1o
Si/C composite powder is the new generation anode material for Li-Ion battery
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Orthorombic
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Back surface: 1 +/- 0
UBSC-DTBT UBSC-DT10 UBSC-LD50
5 mm in diameter x 0
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