SKU:45078861110
InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polishedInAs wafer P Type, Zn doped Size: 10x10x0. 5mm Orientation: <100> + 0. 50 Polishing: one side polishd Resistivities: 0. 0084 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 5. 3E18 cm3 Mobility 126 cm2 V. S Resistivity 0. 0084 ohm cm EPD 1. 2E4 cm 2
The layers are stacked together via van der Waals interactions
- Total Length for each: 24cm
597 Orientation <0001> +/- 0
Tank Capacity Can hold up to 120ml of electrolyte in each tank
PID digital autotune
because it has a lapped glass surface and < flatness of +/- 2 microns
Flow Rate: CFM: 780
The PTFE buffering pads are installed on the bottom of the doctor's blade to reduce friction
Diamond Grinding Plate (1800 mesh) 1 pc EQ-PP-8FPB-SY 8" Polyamide Foam polishing Pad 2 pcs EQ-MW025 Diamond Compound Polishing Paste (0
Quartz holder 6
please review the cleaning instruction for the spin coaters
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