SKU:60409050083
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)Silicon Wafer Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B doped) substrate ,10x5x0. 5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) Resistivity: <0. 005 ohm. cm Size: 10x5 x 0. 5 mm Polish: one side polished Surface roughness: < 5A, RMS Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
In course of CVD fabrication of graphene hydrogen and methane gases are introduced into a furnace that heats to 1000° Celsius
Polish: one side EPI polished with surface roughness Ra< 5 A
Al Terminated face in polished surface
Atomic Mass: 58
Handle Wafers:
Corrosion resistance to Potassium Hydroxide
Dopping: Te doped
Surface Polishing: One side epi polished
ID: 295 mm (see photo below)
please order a 750W transformer)
Orientation: (111) +/-0
High Vacuum Feedthrough with quick connector is installed in the center of the flange 0
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