SKU:34292056797
Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cmSingle crystal Si, (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (111)with 4 deg. off, Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate
Package 10 g / bottle
Conductor type: N-type
2mm (D) x 5
Particles: < 50 @ >0
Compliance CE Certified Patent Granted: 201120462024
300 K (ppm)
the urethane absorbs the energy of the hammer blow
Pocket Size (mm): L5
Oxygen content:<0
Please click the picture below to choose a SS or super-alloy tube from 25 mm to 50 mm ( Pic
Size: 10 x 10 x 0
Package: One 1000 class clean room with 100 class plastic bag
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