SKU:4492122126
Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5
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- USA
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5Ge Wafer Specification Growing Method: CZ Orientation: (100) + (0. 21 0. 25) Deg. Major Flat: <110> + (0. 11 0. 19) Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 5 A ( by AFM) Doping: Sb Doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: <500 cm^2 Package:
40 nm +/- 10 nm
Digital micrometers is available upon request for better accuracy
Bow:<= 10 um
15mm after crimping (Original O
organic materials
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately
Surface finish (RMS or Ra) : < 5A
and needs assembling by yoruselves
T: force (metric ton) applied to the pressure vessel cylinder
Orientation: (110) +/_0
low compression set
Easy to clean and maintain
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