SKU:41890639361
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 5mm Polishing: one side polished Doping: Si doped Conductor type: S C N Carrier Concentration: (7. 2 11. 7) x 10^17 cm^3 Mobility: 2170 2650 cm^2 V. S EPD: <5000 cm^2 resistivity: (2. 56 3. 55)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
8x25ml Hi-throughput Jar is available upon request
Carrier Concentration: 9 x10^8 cm^-3
Pocket Size(mm): L5
X for the Pouch Cell Sealing Machine MSK-115A-L since January 2013
inside: 105×88mm
Packing: The substrate is packed with 100 grade clean plastic bag under 1000 class clean room
989 Angstroms
Polish: two sides polished
Ionic Conductivity 8 × 10- 4 S/ cm at 25
PTFE "T" Piece
Testing Station (Optional)
The resistivity of MoSi2 heating elements rises with the increase in temperature (shown in the graph below)
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