SKU:64568308223
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 50(+ _0. 3) mm dia x 175(+ _15) microns Surface Polishing: One side polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 008 0. 02 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: N A Mobility: N A EPD:
95 d22=13
Please click here to download RoHS test report)
Make sure that there is no visible space between gasket and oven door
so never press the red or green buttons in this period
05" Material SiC Note If you need a larger quantity for resale
Thermal conductivity: 10-20 w/m
Chamber Material & Size
0 grams)or Ni
and Ra < 10
Color: black
DNP-ALF50: Width 400 mm ± 0
1" flange has no thermocouple insert ( click the bottom left picture to see details )
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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