SKU:24659810989
SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
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Ships within 48 hours · Estimated delivery Jul 19 - Jul 24
Description
SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)Silicon Wafer Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P type) substrate ,4"x0. 525mm,1sp SiO2=300nm Ti=10nm Pt(111)=150nm Resistivity: 1 20 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Substrate Size: 4" diameter + 0. 5 mm x 0. 525 mm Polish: one side polished Surface roughness: < 20 A RMS Maximum Thermal Budget of Pt Ti film coated SiO2 Si
Split Cells
Surface roughness: Ra < 5 A
83") Analog-to-digital technique Dual slope Internal resolution 15 bits Read rate 3/sec Polarity Automatic Max error process ±0
Resistivity: 1-10 ohm-cm (If you would like to measure the resistivity accurately
Operation Manual (In the CD with the shipment)
which will deliver better cell performance consistency of charging/discharging
2% rdg ±10mV)
Power: 400W
Note: there is a twin structure Visible on the polished surface
Mobility: 4360-5640cm^2/V
25mm) Tensile Strength
Working Voltage 220VAC
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