SKU:92155888826
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100(+ _0. 4) mm dia x 175(+ _25) microns Surface Polishing: Both sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 51 0. 182 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 188 1. 13) x10^17 Mobility:
1C Discharge Rate (%) 90
Dedicated fixtures can be customized according to battery size
1 Ohms/cm (If you would like to measure the resistivity accurately
TTV: < =15um
Shipments of lithium alloy compound are described as “UN 1415
Maximum Load of a single die 5 metric Ton (at room temperature)
Features an oil-free compressor for compatibility in various environments and temperature settings
Polish: two sides EPI polished by CMP tecnology with less sub-surface lattice damage
Refractive Index: ho = 2
EPD <200 / cm 2
Polish: One side EPI polished by CMP technology with minimum sub-surface damage
6) x 10^18 /cm^3
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