SKU:66520323507
Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cmSingle crystal Si Conductivity: P type ( B doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter Thickness: 0. 35 + 0. 025 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer
highly conductive graphene-based materials with exceptional mechanical strength
Surface Polishing: two sides epi polished
The package includes 5 pieces
Click here to download the product datasheet
Polishone-side
CR2325 positive side
The resulting discs can be used as electrode/separator discs of the split test cell and coin cell for battery researchers as well as TEM sample preparation
Resistivity <0
D 215mm for MTI's GSL-1100X-8
Heating Rate: 5ºC/minute recommended
Compatible Furnace OTF-1200X-S-II
Grown Method : High-pressure vertical Bridgman
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