SKU:29259038937
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipesGrowth method LEC Orientation (511) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
597 Orientation <0001> +/- 0
Net Weight 2 lbs Compliance NRTL or CSA certification is available upon request at the extra cost Warranty One year limited with lifetime support
Built-in Over Temperature and Thermocouple Failure Protection
Anti-fire base: 10 mm thick bakelite plate
Surface roughness: one sides CMP polished with surface roughness < 10 nm
This system provides most applications in battery and supercapacitor testing fields such as electrode materials research
Surface Polishing: One side epi polished
The EQ-FCT-LD Electrolyte Tank System with Jig and Tube Connectors provides a convenient "Plug-In" connection & setup for testing the EQ-VRB-C-LD Redox Flow Cell
please see IC Tray & Plastic Box below
This structure has a high surface area
600 lbs loading
Ability to provide individual temperature monitoring and control for each heating zone of your multi-zone furnace
Quick Dispatch:
Your InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
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